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dc.contributor.authorSummanwar, Anand
dc.contributor.authorLietaer, Nicolas
dc.date.accessioned2017-02-13T10:01:41Z
dc.date.available2017-02-13T10:01:41Z
dc.date.created2015-09-24T20:52:21Z
dc.date.issued2011
dc.identifier.citationMicromechanics and Micro systems Europe Workshop (MME)nb_NO
dc.identifier.urihttp://hdl.handle.net/11250/2430418
dc.description.abstractPlasma based dry etching is a key process widely used in micro-fabrication today. In this article, we look at the challenges involved in the anisotropic etching of buried SiO2 layers at the bottom of high aspect ratio structures on SOI wa-fers. We present our etch results that show the limitations of using a process with radio frequency (RF) substrate bias. This is followed by results obtained with a newly developed dielectric etch process based on a pulsed low frequency (LF) bias which makes it possible to etch through even rela-tively thick buried oxide layers.  Finally we present an application in which this newly developed process was used.
dc.description.abstractEtching buried oxide at the bottom of high aspect ratio structures
dc.language.isoengnb_NO
dc.titleEtching buried oxide at the bottom of high aspect ratio structuresnb_NO
dc.typeLecturenb_NO
dc.identifier.cristin1272875
cristin.unitcode7401,90,31,0
cristin.unitnameMikrosystemer og nanoteknologi
cristin.ispublishedtrue
cristin.fulltextpostprint


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