Etching buried oxide at the bottom of high aspect ratio structures
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Date
2011Metadata
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Original version
Micromechanics and Micro systems Europe Workshop (MME)Abstract
Plasma based dry etching is a key process widely used in micro-fabrication today. In this article, we look at the challenges involved in the anisotropic etching of buried SiO2 layers at the bottom of high aspect ratio structures on SOI wa-fers. We present our etch results that show the limitations of using a process with radio frequency (RF) substrate bias. This is followed by results obtained with a newly developed dielectric etch process based on a pulsed low frequency (LF) bias which makes it possible to etch through even rela-tively thick buried oxide layers. Finally we present an application in which this newly developed process was used. Etching buried oxide at the bottom of high aspect ratio structures