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Beam tests of silicon pixel 3D-sensors developed at SINTEF

Dorholt, Ole; Hansen, Thor-Erik; Heggelund, Andreas Løkken; Kok, Angela; Pacifico, Nicola; Røhne, Ole Myren; Sandaker, Heidi; Stugu, Bjarne; Yang, Zongchang; Bomben, Marco; Rummler, André; Weingarten, Jens
Journal article, Peer reviewed
Accepted version
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URI
http://hdl.handle.net/11250/2583215
Date
2018
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  • Publikasjoner fra CRIStin - SINTEF AS [4329]
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Original version
Journal of Instrumentation. 2018, 13 (8), 1-10.   10.1088/1748-0221/13/08/P08020
Abstract
For the purpose of withstanding very high radiation doses, silicon pixel sensors with a ‘3D’ electrode geometry are being developed. Detectors of this kind are highly interesting for harch radiation environments such as expected in the High Luminosity LHC, but also for space physics and medical applications. In this paper, prototype sensors developed at SINTEF are presented and results from tests in a pion beam at CERN are given. These tests show that these 3D sensors perform as expected with full efficiency at bias voltages between 5 and 15V
 
Beam tests of silicon pixel 3D-sensors developed at SINTEF
 
Journal
Journal of Instrumentation

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