High Temperature Power Electronics Packaging

Abstract

The lack of robust and reliable packaging methods are considered to be one of the main challenges for the next generation of high temperature electronics (>200 °C). Power electronics are especially difficult to operate in this environment. This project investigated packaging technologies suitable for a high temperature power module for operation up to 250 °C. The key technologies investigated were: • A novel type ceramic substrate active metal brazed (AMB) silicon nitride (Si3N4) showed no signs of degradation. • A state-of-the-art Au-Sn solid-liquid interdiffusion (SLID) die attach was developed. • Silicon carbide reinforced aluminium (AlSiC) with cold sprayed Cu was used as a base plate. • Different thermal interface materials were investigated. • Finally, a power module concept was developed. It was based on silicon carbide (SiC) bipolar transistors (BJT). The main conclusion drawn from this project is that reliable packaging technologies for 200 °C and beyond seem possible. Suitable packaging technologies are emerging but commercially available electronic components compatible with this temperature range and these novel technologies are still very sparse. Oppdragsgiver: Norwegian research council