Charge Collection in SOI Microdosimeters and Their Radiation Hardness

dc.contributor.author	Pan, V. A.
dc.contributor.author	Tran, Linh
dc.contributor.author	Pastuovic, Zeljko
dc.contributor.author	Hill, D.
dc.contributor.author	Williams, J.
dc.contributor.author	Kok, Angela Chun Ying
dc.contributor.author	Povoli, Marco
dc.contributor.author	Pogossov, A.
dc.contributor.author	Perrachi, Stefania
dc.contributor.author	Boardman, D
dc.contributor.author	Davis, J.
dc.contributor.author	Guatelli, S.
dc.contributor.author	Petasecca, Marco
dc.contributor.author	Lerch, Michael
dc.contributor.author	Rosenfeld, Anatoly
dc.date.accessioned	2024-06-27T11:58:41Z
dc.date.available	2024-06-27T11:58:41Z
dc.date.created	2023-04-19T13:29:19Z
dc.date.issued	2023
dc.identifier.citation	IEEE Transactions on Nuclear Science. 2023, 70 (4), 568-574.	en_US
dc.identifier.issn	0018-9499
dc.identifier.uri	https://hdl.handle.net/11250/3136194
dc.language.iso	eng	en_US
dc.publisher	Institute of Electrical and Electronics Engineers (IEEE)	en_US
dc.title	Charge Collection in SOI Microdosimeters and Their Radiation Hardness	en_US
dc.type	Peer reviewed	en_US
dc.type	Journal article	en_US
dc.description.version	acceptedVersion	en_US
dc.source.pagenumber	568-574	en_US
dc.source.volume	70	en_US
dc.source.journal	IEEE Transactions on Nuclear Science	en_US
dc.source.issue	4	en_US
dc.identifier.doi	10.1109/TNS.2023.3242267
dc.identifier.cristin	2141860
cristin.ispublished	true
cristin.fulltext	postprint
cristin.qualitycode	1