dc.contributor.author | Getz, Michael Norderhaug | |
dc.contributor.author | Povoli, Marco | |
dc.contributor.author | Monakhov, Eduard | |
dc.date.accessioned | 2023-03-01T16:02:25Z | |
dc.date.available | 2023-03-01T16:02:25Z | |
dc.date.created | 2022-09-21T10:19:50Z | |
dc.date.issued | 2022 | |
dc.identifier.citation | IEEE Journal of Photovoltaics. 2022, 12 (4), 929-936. | en_US |
dc.identifier.issn | 2156-3381 | |
dc.identifier.uri | https://hdl.handle.net/11250/3055119 | |
dc.description.abstract | Al 2 O 3 has rapidly become the surface passivation material of choice for p + layers of solar cells because of its high negative fixed charge, good long-term and thermal stability, and no parasitic absorption. In this article, the surface saturation current density, fixed charge, and interface state density are compared for Al 2 O 3 deposited on Si substrates where the pre-existing out-of-the-box SiO x layer was not removed, with substrates where the SiO x was removed by hydrofluoric acid. The depositions are performed by atomic layer deposition at temperatures in the 150–300 °C range, using trimethylaluminium, H 2 O, and O 3 as precursors. The samples where the native oxide was not removed achieve a higher level of surface passivation for every tested deposition temperature, with the sample deposited at 200 °C exhibiting a surface saturation current density of only 0.9 fA/cm 2 after annealing, a fixed charge of −4.2 × 10 12 cm −2 , and a density of interface states of 9.8 × 10 9 cm −2 eV −1 . Capacitance and conductance voltage characteristics reveal a strong correlation between the surface saturation current density and the density of interface states and fixed charges. It is also determined that the long-term stability of the surface passivation depends on the deposition temperature, with higher deposition temperatures resulting in improved long-term stability. The results indicate that H-terminated Si prior to Al 2 O 3 deposition may have a detrimental effect on the surface passivation. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | IEEE | en_US |
dc.rights | Navngivelse 4.0 Internasjonal | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/deed.no | * |
dc.title | Improving ALD-Al2O3 Surface Passivation of Si Utilizing Pre-Existing SiOx | en_US |
dc.title.alternative | Improving ALD-Al2O3 Surface Passivation of Si Utilizing Pre-Existing SiOx | en_US |
dc.type | Peer reviewed | en_US |
dc.type | Journal article | en_US |
dc.description.version | publishedVersion | en_US |
dc.rights.holder | © 2022 The authors. | en_US |
dc.source.pagenumber | 929-936 | en_US |
dc.source.volume | 12 | en_US |
dc.source.journal | IEEE Journal of Photovoltaics | en_US |
dc.source.issue | 4 | en_US |
dc.identifier.doi | 10.1109/JPHOTOV.2022.3169985 | |
dc.identifier.cristin | 2053792 | |
dc.relation.project | Norges forskningsråd: 289437 | en_US |
dc.relation.project | Norges forskningsråd: 295864 | en_US |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |