Through Silicon Vias in MEMS packaging, a review

dc.contributor.author	Sordo, Guido
dc.contributor.author	Wright, Daniel Nilsen
dc.contributor.author	Moe, Sigurd T.
dc.contributor.author	collini, cristian
dc.date.accessioned	2020-01-24T14:23:09Z
dc.date.available	2020-01-24T14:23:09Z
dc.date.created	2020-01-23T08:27:02Z
dc.date.issued	2019
dc.identifier.citation	NordPac 2019	nb_NO
dc.identifier.uri	http://hdl.handle.net/11250/2637875
dc.description.abstract	Trough Silicon Via (TSV) is a key enabling technology to achieve the integration of various dies by exploiting the third dimension. This allow the integration of heterogeneous chips in a single package (2.5D integration) or to achieve higher integration densities of transistors (3D integration). These vertical interconnections are widely used for both IC and MEMS devices. This paper reviews TSV technology focusing on their implementation in MEMS sensors with a broad overview on the various fabrication approaches and their constraints in terms of process compatibility. A case study of an inertial MEMS sensor will then be presented.	nb_NO
dc.language.iso	eng	nb_NO
dc.subject	Trough Silicon Via	nb_NO
dc.subject	TSV	nb_NO
dc.subject	MEMS	nb_NO
dc.subject	Sensors	nb_NO
dc.subject	Integration	nb_NO
dc.title	Through Silicon Vias in MEMS packaging, a review	nb_NO
dc.type	Lecture	nb_NO
dc.description.version	publishedVersion	nb_NO
dc.identifier.cristin	1780523
dc.relation.project	EC/H2020/785337	nb_NO
cristin.unitcode	7401,90,31,0
cristin.unitname	Microsystems and Nanotechnology
cristin.ispublished	true
cristin.fulltext	original