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dc.contributor.authorGoorsky, Mark S.
dc.contributor.authorSchjølberg-Henriksen, Kari
dc.contributor.authorBeekley, Brett
dc.contributor.authorBai, Tingyu
dc.contributor.authorMani, Karthick
dc.contributor.authorAmbhore, Pranav
dc.contributor.authorBajwa, Adeel
dc.contributor.authorMalik, Nishant
dc.contributor.authorIyer, Subramanian S.
dc.date.accessioned2018-02-19T09:53:49Z
dc.date.available2018-02-19T09:53:49Z
dc.date.created2018-02-06T07:12:21Z
dc.date.issued2017
dc.identifier.citationJapanese Journal of Applied Physics. 2017, 57 (2S1), 7nb_NO
dc.identifier.issn0021-4922
dc.identifier.urihttp://hdl.handle.net/11250/2485594
dc.description.abstractAu-Au thermocompression bonding is a versatile technique of high interest for a variety of applications. We have investigated Au-Au bonding using sputter deposited Au films under conditions of low temperature (150-250 °C) and low bonding pressure (∼3 MPa) for short times (15 min). The combination of low temperature and short times is important for applications involving both hermetic sealing and packaging scaling. The initial surface roughness of the Au film was in the 3-5 nm range with peak-to-valley heights of 20-30 nm and a lateral correlation length of ∼400 nm. For samples bonded at 150 °C, the void morphology at the bonded interface was related to the initial surface roughness. The void morphology was different when bonding at the higher temperatures: the void length (along the bonded interface) decreased significantly but the void height (perpendicular to the interface) increased. These results can be understood in terms of a combination of increased surface Au diffusivity and decreased yield stress and elastic modulus with increased bonding temperature. © 2018 The Japan Society of Applied Physics.nb_NO
dc.language.isoengnb_NO
dc.titleCharacterization of interfacial morphology of low temperature, low pressure Au–Au thermocompression bondingnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersionnb_NO
dc.source.pagenumber7nb_NO
dc.source.volume57nb_NO
dc.source.journalJapanese Journal of Applied Physicsnb_NO
dc.source.issue2S1nb_NO
dc.identifier.doi10.7567/JJAP.57.02BC03
dc.identifier.cristin1562206
dc.relation.projectNorges forskningsråd: 247781nb_NO
cristin.unitcode7401,90,31,0
cristin.unitnameMikrosystemer og nanoteknologi
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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