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dc.contributor.authorTran, Linh T.
dc.contributor.authorProkopovich, Dale A.
dc.contributor.authorPetasecca, Marco
dc.contributor.authorLerch, Michael L.F.
dc.contributor.authorKok, Angela
dc.contributor.authorSummanwar, Anand
dc.contributor.authorHansen, Thor-Erik
dc.contributor.authorDa Via, Cinzia
dc.contributor.authorReinhard, Mark I.
dc.contributor.authorRosenfeld, Anatoly B.
dc.date.accessioned2018-01-31T08:11:12Z
dc.date.available2018-01-31T08:11:12Z
dc.date.created2014-09-12T10:39:55Z
dc.date.issued2014
dc.identifier.citationIEEE Transactions on Nuclear Science. 2014, 61 (4), 1537-1543.nb_NO
dc.identifier.issn0018-9499
dc.identifier.urihttp://hdl.handle.net/11250/2480833
dc.description.abstractA study of charge collection in SINTEF 3D active edge silicon detectors was carried out at ANSTO using Ion Beam InducedCharge (IBIC) technique.An IBIC study has shown that several different geometries of 3D detectors have full depletion under low applied bias. The effect of fast neutron and gamma radiation on their charge collection efficiency was also investigated. A 3D active edge silicon detector technology has demonstrated extremely promising performance for application of the 3D Sensitive Volumes (SVs) fabrication methods to SOI microdosimetry.nb_NO
dc.language.isoengnb_NO
dc.title3D Radiation Detectors: Charge Collection Characterisation and Applicability of Technology for Microdosimetrynb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersionnb_NO
dc.source.pagenumber1537-1543nb_NO
dc.source.volume61nb_NO
dc.source.journalIEEE Transactions on Nuclear Sciencenb_NO
dc.source.issue4nb_NO
dc.identifier.doi10.1109/TNS.2014.2301729
dc.identifier.cristin1153918
dc.relation.projectNorges forskningsråd: 219991nb_NO
cristin.unitcode7401,90,31,0
cristin.unitnameMikrosystemer og nanoteknologi
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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