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dc.contributor.authorPoppe, Erik Utne
dc.contributor.authorJensen, Geir Uri
dc.contributor.authorMoe, Sigurd T.
dc.contributor.authorWang, Dag Thorstein
dc.date.accessioned2018-01-31T07:58:19Z
dc.date.available2018-01-31T07:58:19Z
dc.date.created2016-11-30T10:19:19Z
dc.date.issued2016
dc.identifier.citationECS Transactions. 2016, 75 (9), 311-319.nb_NO
dc.identifier.issn1938-5862
dc.identifier.urihttp://hdl.handle.net/11250/2480825
dc.description.abstractThe effect of bond anneal in Si-Si direct bonding of laminates With thin membranes suspending closed cavities is studied. For membranes of a certain size and thickness, it is found that the under-pressure in the cavity during bond anneal leads to plastic deformation of the membrane. By controlling the cavity pressure it is found that the Si crystal of the membrane can be kept intact during bond anneal.nb_NO
dc.language.isoengnb_NO
dc.titlePlastic Deformation of Thin Si Membranes in Si-Si Direct Bondingnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersionnb_NO
dc.source.pagenumber311-319nb_NO
dc.source.volume75nb_NO
dc.source.journalECS Transactionsnb_NO
dc.source.issue9nb_NO
dc.identifier.doi10.1149/07509.0311ecst
dc.identifier.cristin1406279
dc.relation.projectNorges forskningsråd: 247781nb_NO
cristin.unitcode7401,90,31,0
cristin.unitnameMikrosystemer og nanoteknologi
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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