dc.contributor.author | Kok, Angela | |
dc.contributor.author | Hansen, Thor-Erik | |
dc.contributor.author | Hansen, Trond Andreas | |
dc.contributor.author | Jensen, Geir Uri | |
dc.contributor.author | Lietaer, Nicolas | |
dc.contributor.author | Mielnik, Michal Marek | |
dc.contributor.author | Storås, Preben | |
dc.date.accessioned | 2017-02-13T09:48:23Z | |
dc.date.available | 2017-02-13T09:48:23Z | |
dc.date.created | 2012-11-23T15:18:31Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | IEEE Nuclear Science Symposium Conference Record. 2009, 1623-1627. | nb_NO |
dc.identifier.issn | 1082-3654 | |
dc.identifier.uri | http://hdl.handle.net/11250/2430400 | |
dc.description.abstract | 3D detectors with electrodes penetrating through the entire silicon substrate have many advantages over conventional planar silicon technology, for example, high radiation tolerance. High aspect ratio through-wafer holes are essential in such fabrication, and deep reactive ion etching (DRIE) is used. A series of DRIE processes were tested and optimised to achieve the required aspect ratio, and in 5-μm wide trenches, aspect ratios of 58:1 were achieved | |
dc.language.iso | eng | nb_NO |
dc.subject | Raidation tolerance | |
dc.subject | Deep reactive ion etching | |
dc.subject | High aspect ratio | |
dc.subject | 3D detectors | |
dc.title | High aspect ratio deep RIE for novel 3D radiation sensors in high energy physics applications | nb_NO |
dc.type | Journal article | nb_NO |
dc.type | Peer reviewed | nb_NO |
dc.source.pagenumber | 1623-1627 | nb_NO |
dc.source.journal | IEEE Nuclear Science Symposium Conference Record | nb_NO |
dc.identifier.doi | 10.1109/NSSMIC.2009.5402256 | |
dc.identifier.cristin | 964556 | |
cristin.unitcode | 7401,90,31,0 | |
cristin.unitname | Mikrosystemer og nanoteknologi | |
cristin.ispublished | true | |
cristin.fulltext | postprint | |
cristin.qualitycode | 1 | |