Blar i SINTEF Industri på forfatter "Ahmad, Mujeeb"
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Charge Transport in 2D MoS2, WS2, and MoS2–WS2 Heterojunction-Based Field-Effect Transistors: Role of Ambipolarity
Kaushik, Vishakha; Ahmad, Mujeeb; Khushboo, Agarwal; Varandani, Deepak; Belle, Branson; Das, Pintu; Mehta, Bodh R. (Peer reviewed; Journal article, 2020)Electrical and optical characteristics of few-layered (3–4 L) chemical vapor deposition (CVD) grown MoS2, WS2, and MoS2–WS2 heterostructure-based back-gated field-effect transistor (FET) devices have herein been studied. ... -
Enhanced gas sensing response for 2D α-MoO3 layers: thickness-dependent changes in defect concentration, surface oxygen adsorption, and metal-metal oxide contact
Bisht, Prashant; Kumar, Arvind; Jensen, Ingvild Julie Thue; Ahmad, Mujeeb; Belle, Branson; Mehta, Bodh (Peer reviewed; Journal article, 2021)In this study, α-MoO3 two-dimensional (2D) layers and thin films were synthesized using pulsed laser deposition technique. X-ray diffraction and Raman spectroscopy confirm the formation of anisotropic α-MoO3. Atomic Force ...