Blar i SINTEF Digital på forfatter "Galeckas, Augustinas"
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Cross-Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations
Galeckas, Augustinas; Karsthof, Robert Michael; Gana, Kingsly; Kok, Angela; Bathen, Marianne Etzelmüller; Vines, Lasse; Kuznetsov, Andrej (Peer reviewed; Journal article, 2022)The carrier lifetime control over 150 μm thick 4H-SiC epitaxial layers via thermal generation and annihilation of carbon vacancy (VC) related Z1/2 lifetime killer sites is reported. The defect developments upon typical SiC ... -
Cubic silicon carbide as a potential photovoltaic material
Syväjärvi, Mikael; Ma, Quanbao; Jokubavicius, Valdas; Galeckas, Augustinas; Sun, Jianwu; Liu, Xinyu; Jansson, Mattias; Wellmann, Peter; Linnarsson, Margareta; Runde, Paal; Johansen, Bertil; Thøgersen, Annett; Diplas, Spyridon; Carvalho, Patricia; Løvvik, Ole Martin; Wright, Daniel Nilsen; Azarov, Alexander; Svensson, Bengt Gunnar (Peer reviewed; Journal article, 2016)In this work we present a significant advancement in cubic silicon carbide (3C-SiC) growth in terms of crystal quality and domain size, and indicate its potential use in photovoltaics. To date, the use of 3C-SiC for ...