dc.contributor.author | Stange, Marit Synnøve Sæverud | |
dc.contributor.author | Sunde, Tor Olav Løveng | |
dc.contributor.author | Dahl-Hansen, Runar Plunnecke | |
dc.contributor.author | Rajput, Kalpna | |
dc.contributor.author | Graff, Joachim Seland | |
dc.contributor.author | Belle, Branson Delano | |
dc.contributor.author | Ulyashin, Alexander | |
dc.date.accessioned | 2024-06-05T08:27:00Z | |
dc.date.available | 2024-06-05T08:27:00Z | |
dc.date.created | 2023-12-08T10:58:31Z | |
dc.date.issued | 2023 | |
dc.identifier.citation | Coatings. 2023, 13 (12), 2030. | en_US |
dc.identifier.issn | 2079-6412 | |
dc.identifier.uri | https://hdl.handle.net/11250/3132625 | |
dc.description.abstract | This paper describes the high-rate (~1.5 μm/min) growth of Si films on Si supporting substrates with (100) crystallographic orientation at 600 °C, 800 °C, and 1000 °C in a vacuum environment of ~1 × 10−5 mbar using electron beam (e-beam) evaporation. The microstructure, crystallinity, and conductivity of such films were investigated. It was established that fully crystalline (Raman spectroscopy, EBSD) and stress-free epi-Si layers with a thickness of approximately 50 µm can be fabricated at 1000 °C, while at 600 °C and 800 °C, some poly-Si inclusions were observed using Raman spectroscopy. Hall effect measurements showed that epi-Si layers deposited at 1000 °C had resistivity, carrier concentration, and mobility comparable to those obtained for c-Si wafers fabricated through ingot growth and wafering using the same solar grade Si feedstock used for the e-beam depositions. The dislocation densities were determined to be ∼2 × 107 cm−2 and ∼5 × 106 cm−2 at 800 and 1000 °C, respectively, using Secco etch. The results highlight the potential of e-beam evaporation as a promising and cost-effective alternative to conventional CVD for the growth of epi-Si layers and, potentially, epi-Si wafers. Some of the remaining technical challenges of this deposition technology are briefly indicated and discussed. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | MDPI | en_US |
dc.rights | Navngivelse 4.0 Internasjonal | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/deed.no | * |
dc.title | High-Rate Epitaxial Growth of Silicon Using Electron Beam Evaporation at High Temperatures | en_US |
dc.title.alternative | High-Rate Epitaxial Growth of Silicon Using Electron Beam Evaporation at High Temperatures | en_US |
dc.type | Peer reviewed | en_US |
dc.type | Journal article | en_US |
dc.description.version | publishedVersion | en_US |
dc.rights.holder | © 2023 by the authors. Published by MDPI. | en_US |
dc.source.pagenumber | 10 | en_US |
dc.source.volume | 13 | en_US |
dc.source.journal | Coatings | en_US |
dc.source.issue | 12 | en_US |
dc.identifier.doi | 10.3390/coatings13122030 | |
dc.identifier.cristin | 2210908 | |
dc.relation.project | Norges forskningsråd: 245744 | en_US |
dc.relation.project | Norges forskningsråd: 257639 | en_US |
dc.source.articlenumber | 2030 | en_US |
cristin.ispublished | true | |
cristin.fulltext | original | |
cristin.qualitycode | 1 | |