dc.contributor.author | Matkivskyi, Vladyslav | |
dc.contributor.author | Leiviska, Oskari | |
dc.contributor.author | Wenner, Sigurd | |
dc.contributor.author | Liu, Hanchen | |
dc.contributor.author | Vahanissi, Ville | |
dc.contributor.author | Savin, Hele | |
dc.contributor.author | Sabatino, Marisa Di | |
dc.contributor.author | Tranell, Maria Gabriella | |
dc.date.accessioned | 2023-09-20T12:01:27Z | |
dc.date.available | 2023-09-20T12:01:27Z | |
dc.date.created | 2023-08-10T15:16:42Z | |
dc.date.issued | 2023 | |
dc.identifier.citation | Materials. 2023, 16 (16), 5522. | en_US |
dc.identifier.issn | 1996-1944 | |
dc.identifier.uri | https://hdl.handle.net/11250/3090818 | |
dc.description.abstract | Two widely used atomic layer deposition precursors, Tetrakis (dimethylamido) titanium (TDMA-Ti) and titanium tetrachloride (TiCl4), were investigated for use in the deposition of TiOx-based thin films as a passivating contact material for solar cells. This study revealed that both precursors are suited to similar deposition temperatures (150 °C). Post-deposition annealing plays a major role in optimising the titanium oxide (TiOx) film passivation properties, improving minority carrier lifetime (τeff) by more than 200 µs. Aluminium oxide deposited together with titanium oxide (AlOy/TiOx) reduced the sheet resistance by 40% compared with pure TiOx. It was also revealed that the passivation quality of the (AlOy/TiOx) stack depends on the precursor and ratio of AlOy to TiOx deposition cycles. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | MDPI | en_US |
dc.rights | Navngivelse 4.0 Internasjonal | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/deed.no | * |
dc.title | Atomic Layer Deposition of Titanium Oxide-Based Films for Semiconductor Applications—Effects of Precursor and Operating Conditions | en_US |
dc.type | Peer reviewed | en_US |
dc.type | Journal article | en_US |
dc.description.version | publishedVersion | en_US |
dc.rights.holder | © 2023 by the authors. Licensee MDPI, Basel, Switzerland. | en_US |
dc.source.volume | 16 | en_US |
dc.source.journal | Materials | en_US |
dc.source.issue | 16 | en_US |
dc.identifier.doi | 10.3390/ma16165522 | |
dc.identifier.cristin | 2166229 | |
dc.source.articlenumber | 5522 | en_US |
cristin.ispublished | true | |
cristin.fulltext | original | |