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dc.contributor.authorMukherjee, Anjan
dc.contributor.authorRen, Dingding
dc.contributor.authorVullum, Per Erik
dc.contributor.authorHuh, Junghwan
dc.contributor.authorFimland, Bjørn-Ove
dc.contributor.authorWeman, Helge
dc.identifier.citationACS Photonics. 2021, 8 (8), 2355-2366.en_US
dc.description.abstractHere we demonstrate a more effective use of III–V photoconversion material to achieve an ultrahigh power-per-weight ratio from a solar cell utilizing an axial p-i-n junction GaAs/AlGaAs nanowire (NW) array grown by molecular beam epitaxy on a Si substrate. By analyzing single NW multicontact devices, we first show that an n-GaAs shell is self-formed radially outside the axial p- and i-core of the GaAs NW during n-core growth, which significantly deteriorates the rectification property of the NWs in the axial direction. When employing a selective-area ex situ etching process for the n-GaAs shell, a clear rectification of the axial NW p-i-n junction with a high on/off ratio was revealed. Such a controlled etching process of the self-formed n-GaAs shell was further introduced to fabricate axial p-i-n junction GaAs NW array solar cells. Employing this method, a GaAs NW array solar cell with only ∼1.3% areal coverage of the NWs shows a photoconversion efficiency of ∼7.7% under 1 Sun intensity (AM 1.5G), which is the highest achieved efficiency from any single junction GaAs NW solar cell grown on a Si substrate so far. This corresponds to a power-per-weight ratio of the active III–V photoconversion material as high as 560 W/g, showing great promise for high-efficiency and low-cost III–V NW solar cells and III–V NW/Si tandem solar cells.en_US
dc.publisherAmerican Chemical Societyen_US
dc.rightsNavngivelse 4.0 Internasjonal*
dc.subjectmolecular beam epitaxyen_US
dc.subjectshell etchingen_US
dc.subjectaxial junctionen_US
dc.subjectGaAs on Sien_US
dc.subjectsolar cellen_US
dc.titleGaAs/AlGaAs Nanowire Array Solar Cell Grown on Si with Ultrahigh Power-per-Weight Ratioen_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.rights.holder© 2021 The Authors. Published by American Chemical Societyen_US
dc.source.journalACS Photonicsen_US
dc.relation.projectNorges forskningsråd: 295864en_US
dc.relation.projectNorges forskningsråd: 197405en_US
dc.relation.projectNorges forskningsråd: 239206en_US
dc.relation.projectNorges forskningsråd: 228758en_US

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Navngivelse 4.0 Internasjonal
Except where otherwise noted, this item's license is described as Navngivelse 4.0 Internasjonal