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dc.contributor.authorLøvvik, Ole Martin
dc.contributor.authorFlage-Larsen, Espen
dc.contributor.authorSkomedal, Gunstein
dc.date.accessioned2022-10-10T10:29:53Z
dc.date.available2022-10-10T10:29:53Z
dc.date.created2020-11-16T08:44:31Z
dc.date.issued2020
dc.identifier.citationJournal of Applied Physics. 2020, 128, 1-14.en_US
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/11250/3025053
dc.description.abstractMore than 1000 crystalline silicide materials have been screened for thermoelectric properties using first-principles atomistic calculations coupled with the semi-classical Boltzmann transport equation. Compounds that contain radioactive, toxic, rare, and expensive elements as well as oxides, hydrides, carbides, nitrides, and halides have been neglected in the study. The already well-known silicides with good thermoelectric properties, such as SiGe, Mg2Si, and MnSix, are successfully predicted to be promising compounds along with a number of other binary and ternary silicide compositions. Some of these materials have only been scarcely studied in the literature, with no thermoelectric properties being reported in experimental papers. These novel materials can be very interesting for thermoelectric applications provided that they can be heavily doped to give a sufficiently high charge carrier concentration and that they can be alloyed with isoelectronic elements to achieve adequately low phonon thermal conductivity. The study concludes with a list of the most promising silicide compounds that are recommended for further experimental and theoretical investigations.en_US
dc.language.isoengen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rightsNavngivelse 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/deed.no*
dc.titleScreening of thermoelectric silicides with atomistic transport calculationsen_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.description.versionpublishedVersionen_US
dc.rights.holder© 2020 Authorsen_US
dc.source.pagenumber14en_US
dc.source.volume128en_US
dc.source.journalJournal of Applied Physicsen_US
dc.identifier.doi10.1063/5.0008198
dc.identifier.cristin1848162
dc.relation.projectNorges forskningsråd: 269326en_US
dc.relation.projectNotur/NorStore: nn2615ken_US
dc.source.articlenumber125105en_US
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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