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dc.contributor.authorLiudi Mulyo, Andreas
dc.contributor.authorRajpalke, Mohana
dc.contributor.authorVullum, Per Erik
dc.contributor.authorWeman, Helge
dc.contributor.authorKishino, Katsumi
dc.contributor.authorFimland, Bjørn-Ove
dc.identifier.citationScientific Reports. 2020, 10 (853), 1-12.en_US
dc.description.abstractGaN nanocolumns were synthesized on single-layer graphene via radio-frequency plasma-assisted molecular beam epitaxy, using a thin migration-enhanced epitaxy (MEE) AlN buffer layer as nucleation sites. Due to the weak nucleation on graphene, instead of an AlN thin-film we observe two distinguished AlN formations which affect the subsequent GaN nanocolumn growth: (i) AlN islands and (ii) AlN nanostructures grown along line defects (grain boundaries or wrinkles) of graphene. Structure (i) leads to the formation of vertical GaN nanocolumns regardless of the number of AlN MEE cycles, whereas (ii) can result in random orientation of the nanocolumns depending on the AlN morphology. Additionally, there is a limited amount of direct GaN nucleation on graphene, which induces non-vertical GaN nanocolumn growth. The GaN nanocolumn samples were characterized by means of scanning electron microscopy, transmission electron microscopy, high-resolution X-ray diffraction, room temperature micro-photoluminescence, and micro-Raman measurements. Surprisingly, the graphene with AlN buffer layer formed using less MEE cycles, thus resulting in lower AlN coverage, has a lower level of nitrogen plasma damage. The AlN buffer layer with lowest AlN coverage also provides the best result with respect to high-quality and vertically-aligned GaN nanocolumns.en_US
dc.publisherNature Researchen_US
dc.rightsNavngivelse 4.0 Internasjonal*
dc.titleThe influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on grapheneen_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.rights.holder© The Authors 2020en_US
dc.subject.nsiVDP::Nanoteknologi: 630en_US
dc.subject.nsiVDP::Nanotechnology: 630en_US
dc.source.journalScientific Reportsen_US
dc.relation.projectNorges forskningsråd: 296459en_US
dc.relation.projectNorges forskningsråd: 259553en_US
dc.relation.projectNorges forskningsråd: 221860en_US
dc.relation.projectNorges forskningsråd: 239206en_US
dc.relation.projectNorges forskningsråd: 295864en_US
dc.relation.projectNorges forskningsråd: 197405en_US

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