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dc.contributor.authorMayandi, Jeyanthinath
dc.contributor.authorSchrade, Matthias
dc.contributor.authorVajeeston, Ponniah
dc.contributor.authorStange, Marit Synnøve Sæverud
dc.contributor.authorLind, Anna Maria
dc.contributor.authorSunding, Martin Fleissner
dc.contributor.authorDeuermeier, Jonas
dc.contributor.authorFortunato, Elvira
dc.contributor.authorLøvvik, Ole Martin
dc.contributor.authorUlyashin, Alexander
dc.contributor.authorDiplas, Spyridon
dc.contributor.authorAlmeida Carvalho, Patricia
dc.contributor.authorFinstad, Terje Gunnar
dc.date.accessioned2022-04-01T13:37:50Z
dc.date.available2022-04-01T13:37:50Z
dc.date.created2022-02-15T16:38:56Z
dc.date.issued2022
dc.identifier.issn0734-2101
dc.identifier.urihttps://hdl.handle.net/11250/2989345
dc.description.abstractHigh entropy alloy (HEA) films of CrFeCoNiCu were deposited by sputtering. Their structure was characterized and their electric transport properties were studied by temperature-dependent Hall and Seebeck measurements. The HEA films show a solid solution with an fcc structure. The residual electrical resistivity of the films is around 130 μΩ cm, which is higher than the Mott limit for a metal while the temperature dependence of the resistivity above 30 K is metal-like but with a small temperature coefficient of resistivity (2 ppm/K). The dominant scattering mechanism of charge carriers is alloy scattering due to chemical disorder in the HEA. The Hall coefficient is positive while the Seebeck coefficient is negative. This is interpreted as arising from an electronic structure where the Fermi level passes through band states having both holes and electrons as indicated by band structure calculations. Below 30 K, the conduction is discussed in terms of weak localization and Kondo effects. The HEA structure appears stable for annealing in vacuum, while annealing in an oxygen-containing atmosphere causes the surface to oxidize and grow a Cr-rich oxide on the surface. This is then accompanied by demixing of the HEA solid solution and a decrease in the effective resistance of the film.en_US
dc.language.isoengen_US
dc.publisherAIP Publishing LLCen_US
dc.titleHigh entropy alloy CrFeNiCoCu sputter deposited films: Structure, electrical properties, and oxidationen_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.description.versionacceptedVersionen_US
dc.rights.holderThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Jeyanthinath Mayandi, Matthias Schrade, Ponniah Vajeeston, Marit Stange, Anna M. Lind, Martin F. Sunding, Jonas Deuermeier, Elvira Fortunato, Ole M. Løvvik, Alexander G. Ulyashin, Spyros Diplas, Patricia A. Carvalho, and Terje G. Finstad , "High entropy alloy CrFeNiCoCu sputter deposited films: Structure, electrical properties, and oxidation", Journal of Vacuum Science & Technology A 40, 023402 (2022) https://doi.org/10.1116/6.0001394 and may be found at https://avs.scitation.org/doi/10.1116/6.0001394en_US
dc.source.volume40en_US
dc.source.journalJournal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Filmsen_US
dc.source.issue2en_US
dc.identifier.doi10.1116/6.0001394
dc.identifier.cristin2001960
dc.relation.projectNorges forskningsråd: 245963en_US
dc.relation.projectNorges forskningsråd: 197405en_US
dc.relation.projectNorges forskningsråd: 275752en_US
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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