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dc.contributor.authorPark, Joonsang
dc.contributor.authorEiken, Ola
dc.contributor.authorBjørnarå, Tore I.
dc.contributor.authorBohloli, Bahman
dc.date.accessioned2021-09-23T07:27:59Z
dc.date.available2021-09-23T07:27:59Z
dc.date.issued2021
dc.identifier.isbn978-82-536-1714-5
dc.identifier.issn2387-4295
dc.identifier.urihttps://hdl.handle.net/11250/2780656
dc.description.abstractWe report a generalized Geertsma solution with which we can calculate the surface deformation from a subsurface made of an arbitrary number of isotropic homogeneous layers and a thick reservoir at any depth. We validate the generalized Geertsma solution by solving simple numerical examples and comparing the results with a reference finite-element solution. Then, we apply the generalized Geertsma solution to more realistic subsurface models to study the effect of subsurface layering on surface deformation and the impact of acquisition-processing accuracy on inverted reservoir pressure. The modelling demonstrates the surface deformation (both magnitude and shape) is most influenced by the reservoir stiffness. Finally, the inversion exercise demonstrates that for the case of In Salah-inspired synthetic model, 3% noise resulting from data acquisition-processing error may introduce 15% deviation in the inverted pressure compared to the true reservoir pressure.en_US
dc.language.isoengen_US
dc.publisherSINTEF Academic Pressen_US
dc.relation.ispartofTCCS–11. CO2 Capture, Transport and Storage. Trondheim 22nd–23rd June 2021 Short Papers from the 11th International Trondheim CCS Conference
dc.relation.ispartofseriesSINTEF Proceedings;7
dc.rightsCC BY 4.0*
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/*
dc.subjectSurface heavingen_US
dc.subjectGeertsma solutionen_US
dc.subjectLayered subsurfaceen_US
dc.subjectCO2 injectionen_US
dc.titleGeneralized Geertsma Solution for Isotropic Layered Mediumen_US
dc.typeChapteren_US
dc.typePeer revieweden_US
dc.typeConference objecten_US
dc.description.versionpublishedVersionen_US
dc.rights.holder© 2021 The Authors. Published by SINTEF Academic Press.en_US
dc.subject.nsiVDP::Teknologi: 500en_US
dc.identifier.cristin1937439


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