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Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer

Liudi Mulyo, Andreas; Rajpalke, Mohana Krishnappa; Kuroe, Haruhiko; Vullum, Per-Erik; Weman, Helge; Fimland, Bjørn-Ove; Kishino, Katsumi
Peer reviewed, Journal article
Accepted version
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Liudi Mulyo 2018 (2.508Mb)
URI
https://hdl.handle.net/11250/2721036
Date
2018
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Original version
Nanotechnology. 2018, 30 (1), 015604-?.   10.1088/1361-6528/aae76b
Abstract
We report on the self-assembled growth of high-density and vertically-oriented n-doped GaN nanocolumns on graphene by radio-frequency plasma-assisted molecular beam epitaxy. Graphene was transferred to silica glass, which was used as the substrate carrier. Using a migration enhanced epitaxy grown AlN buffer layer for the nucleation is found to enable a high density of vertical GaN nanocolumns with c-axis growth orientation on graphene. Furthermore, micro-Raman spectroscopy indicates that the AlN buffer reduces damage on the graphene caused by impinging active N species generated by the radio-frequency plasma source during the initial growth stage and nucleation of GaN. In addition, the grown GaN nanocolumns on graphene are found to be virtually stress-free. Micro-photoluminescence measurements show near band-edge emission from wurtzite GaN, exhibiting higher GaN bandgap related photoluminescence intensity relative to a reference GaN bulk substrate and the absence of both yellow luminescence and excitonic defect emission. Transmission electron microscopy reveals the interface of GaN nanocolumns on graphene via a thin AlN buffer layer. Even though the first few monolayers of AlN on top of graphene are strained due to in-plane lattice mismatch between AlN and graphene, the grown GaN nanocolumns have a wurtzite crystal structure without observable defects. The results of this initial work pave the way towards realizing low-cost and high-performance electronic and optoelectronic devices based on III-N semiconductors grown on graphene.
Publisher
IOP Science
Journal
Nanotechnology
Copyright
This is the Accepted Manuscript version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://iopscience.iop.org/article/10.1088/1361-6528/aaef4a

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