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dc.contributor.authorJia, Guobin
dc.contributor.authorPlentz, Jonathan
dc.contributor.authorGawlik, Annett
dc.contributor.authorS. Azar, Amin
dc.contributor.authorStokkan, Gaute
dc.contributor.authorSyvertsen, Martin
dc.contributor.authorAlmeida Carvalho, Patricia
dc.contributor.authorDellith, Jan
dc.contributor.authorDellith, Andrea
dc.contributor.authorAndrä, Gudrun
dc.contributor.authorUlyashin, Alexander
dc.date.accessioned2020-12-23T13:56:32Z
dc.date.available2020-12-23T13:56:32Z
dc.date.created2019-03-13T14:24:18Z
dc.date.issued2018
dc.identifier.citationInternational Journal of Photoenergy (Online). 2018, 2018:6563730 1-7.en_US
dc.identifier.issn1110-662X
dc.identifier.urihttps://hdl.handle.net/11250/2720970
dc.description.abstractIn this study, laser-treated polycrystalline Si (pc-Si) wafers, fabricated by wire sawing of hot-pressed ingots sintered from Si powder, have been investigated. As-cut wafers and those with high-quality thin Si layers deposited on top of them by e-beam have been subjected to laser irradiation to clarify typical trends of structural modifications caused by laser treatments. Moreover, possibility to use laser-treated Si powder-based substrates for fabrication of advanced Si structures has been analysed. It is established that (i) Si powder-based wafers with thicknesses ~180 μm can be fully (from the front to back side) or partly (subsurface region) remelted by a diode laser and grain sizes in laser-treated regions can be increased; (ii) a high-quality top layer can be fabricated by crystallization of an additional a-Si layer deposited by e-beam evaporation on top of the pc-Si; and (iii) silicon nanowires can be formed by metal-assisted wet chemical etching (MAWCE) of polished Si powder-based wafers and as-cut wafers irradiated with medium laser power, while a surface texturing on the as-cut pc-Si wafers occur, and no nanowires can form in the region subject to a liquid phase crystallization (LPC) caused by high-power laser treatments.en_US
dc.language.isoengen_US
dc.publisherHindawien_US
dc.rightsNavngivelse 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/deed.no*
dc.titleSilicon powder-based wafers for low-cost photovoltaics: Laser treatments and nanowire etchingen_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.description.versionpublishedVersionen_US
dc.rights.holderCopyright © 2018 G. Jia et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.en_US
dc.source.pagenumber1-7en_US
dc.source.volume2018:6563730en_US
dc.source.journalInternational Journal of Photoenergy (Online)en_US
dc.identifier.doi10.1155/2018/6563730
dc.identifier.cristin1684512
cristin.unitcode7401,80,63,0
cristin.unitcode7401,80,62,0
cristin.unitnameMetallproduksjon og prosessering
cristin.unitnameBærekraftig energiteknologi
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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