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dc.contributor.authorNematollahi, Mohammadreza
dc.contributor.authorYang, Xiaodong
dc.contributor.authorSeim, Eivind
dc.contributor.authorVullum, Per Erik
dc.contributor.authorHolmestad, Randi
dc.contributor.authorGibson, Ursula
dc.contributor.authorReenaas, Turid Worren
dc.date.accessioned2020-12-15T13:10:44Z
dc.date.available2020-12-15T13:10:44Z
dc.date.created2016-01-25T18:02:24Z
dc.date.issued2016
dc.identifier.citationApplied Physics A: Materials Science & Processing. 2016, 122 (84), .en_US
dc.identifier.issn0947-8396
dc.identifier.urihttps://hdl.handle.net/11250/2719578
dc.description.abstractWe present the properties of Cr-doped zinc sulfide (ZnS:Cr) films deposited on Si(100) by pulsed laser deposition. The films are studied for solar cell applications, and to obtain a high absorption, a high Cr content (2.0–5.0 at.%) is used. It is determined by energy-dispersive X-ray spectroscopy that Cr is relatively uniformly distributed, and that local Cr increases correspond to Zn decreases. The results indicate that most Cr atoms substitute Zn sites. Consistently, electron energy loss and X-ray photoelectron spectroscopy showed that the films contain mainly Cr2+ ions. Structural analysis showed that the films are polycrystalline and textured. The films with ~4 % Cr are mainly grown along the hexagonal [001] direction in wurtzite phase. The average lateral grain size decreases with increasing Cr content, and at a given Cr content, increases with increasing growth temperature.en_US
dc.language.isoengen_US
dc.publisherSpringeren_US
dc.subjectTransmission electron microscopyen_US
dc.subjectCrystal structureen_US
dc.subjectCr-doped ZnSen_US
dc.subjectPulsed laser depositionen_US
dc.titleCompositional and structural properties of pulsed laser-deposited ZnS:Cr filmsen_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.description.versionacceptedVersionen_US
dc.rights.holderThis is a post-peer-review, pre-copyedit version of an article published in Applied Physics A. The final authenticated version is available online at: https://link.springer.com/article/10.1007%2Fs00339-016-9594-9en_US
dc.source.pagenumber11en_US
dc.source.volume122en_US
dc.source.journalApplied Physics A: Materials Science & Processingen_US
dc.source.issue84en_US
dc.identifier.doi10.1007/s00339-016-9594-9
dc.identifier.cristin1322133
dc.relation.projectNorges forskningsråd: 219686/O70en_US
dc.relation.projectNorges forskningsråd: 245963en_US
dc.relation.projectNorges forskningsråd: 203503en_US
dc.relation.projectNorges forskningsråd: 193829en_US
dc.source.articlenumber84en_US
cristin.unitcode7401,80,6,1
cristin.unitnameMaterialfysikk, Trh.
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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