• Minority carrier lifetimes in Cz-Si wafers with intentional V-I transitions 

      Søndenå, Rune; Ryningen, Birgit; Juel, Mari (Peer reviewed; Journal article, 2017)
      A p-type Cz-Si crystal has been pulled with varying pulling speed in order to produce wafers containing two distinct regions; A region with silicon self-interstitial defects, and a vacancy dominated region. Band-to-band ...
    • Phosphorus separation from metallurgical-grade silicon by magnesium alloying and acid leaching 

      Zhu, Mengyi; Azarov, Alexander; Monakhov, Eduard; Tang, Kai; Safarian, Jafar (Peer reviewed; Journal article, 2020)
      In this paper, the separation of phosphorus from metallurgical-grade silicon was investigated based on an Mg alloying and HCl leaching approach. Experimental results show that P concentration was reduced from initial 15.1 ...
    • Shallow Impurity Band in ZrNiSn 

      Schrade, Matthias; Berland, Kristian; Kosinskiy, Andrey; Heremans, Joseph P.; Finstad, Terje (Peer reviewed; Journal article, 2020)
      ZrNiSn and related half Heusler compounds are candidate materials for efficient thermoelectric energy conversion with a reported thermoelectric figure-of-merit of n-type ZrNiSn exceeding unity. Progress on p-type materials ...