Blar i SINTEF Industri på emneord "Defects"

Viser treff 1-3 av 3

    • Minority carrier lifetimes in Cz-Si wafers with intentional V-I transitions 

      Søndenå, Rune; Ryningen, Birgit; Juel, Mari (Peer reviewed; Journal article, 2017)
      A p-type Cz-Si crystal has been pulled with varying pulling speed in order to produce wafers containing two distinct regions; A region with silicon self-interstitial defects, and a vacancy dominated region. Band-to-band ...

    • Observation of Electric-Field-Induced Structural Dislocations in a Ferroelectric Oxide 

      Evans, Donald; Småbråten, Didrik Rene; Holstad, Theodor Secanell; Vullum, Per Erik; Mosberg, Aleksander Buseth; Yan, Zewu; Bourret, Edith; Van Helvoort, Antonius; Selbach, Sverre Magnus; Meier, Dennis (Peer reviewed; Journal article, 2021)
      Dislocations are 1D topological defects with emergent electronic properties. Their low dimensionality and unique properties make them excellent candidates for innovative device concepts, ranging from dislocation-based ...

    • Oxygen nonstoichiometry in (Ca2CoO3)0.62(CoO2): a combined experimental and computational study 

      Schrade, Matthias; Casolo, Simone; Graham, Paul J.; Ulrich, Clemens; Li, Sean; Løvvik, Ole Martin; Finstad, Terje; Norby, Truls (Peer reviewed; Journal article, 2014)
      The oxygen nonstoichiometry in the misfit calcium cobaltite (Ca2CoO3)0.62(CoO2) has been studied experimentally and by density functional theory (DFT) calculations. The standard oxidation enthalpy ΔH0Ox of oxygen deficient ...