Browsing SINTEF Open by Subject "Gallium arsenide (GaAs)"
Now showing items 1-1 of 1
-
Detecting minute amounts of nitrogen in GaNAs thin films using STEM and CBED
(Peer reviewed; Journal article, 2021)Nitrogen (N) is a common element added to GaAs for band gap engineering and strain compensation. However, detection of small amounts of N is difficult for electron microscopy as well as for other chemical analysis techniques. ...