• High-Rate Epitaxial Growth of Silicon Using Electron Beam Evaporation at High Temperatures 

      Stange, Marit Synnøve Sæverud; Sunde, Tor Olav Løveng; Dahl-Hansen, Runar Plunnecke; Rajput, Kalpna; Graff, Joachim Seland; Belle, Branson Delano; Ulyashin, Alexander (Peer reviewed; Journal article, 2023)
      This paper describes the high-rate (~1.5 μm/min) growth of Si films on Si supporting substrates with (100) crystallographic orientation at 600 °C, 800 °C, and 1000 °C in a vacuum environment of ~1 × 10−5 mbar using electron ...