dc.contributor.author | Vatanparast, Maryam | |
dc.contributor.author | Shao, Yu-Tsun | |
dc.contributor.author | Rajpalke, Mohana | |
dc.contributor.author | Fimland, Bjørn-Ove | |
dc.contributor.author | Reenaas, Turid Dory | |
dc.contributor.author | Holmestad, Randi | |
dc.contributor.author | Vullum, Per Erik | |
dc.contributor.author | Zuo, Jian Min | |
dc.date.accessioned | 2022-08-10T08:40:28Z | |
dc.date.available | 2022-08-10T08:40:28Z | |
dc.date.created | 2021-07-28T23:20:57Z | |
dc.date.issued | 2021 | |
dc.identifier.citation | Ultramicroscopy. 2021, 231, 1-9. | en_US |
dc.identifier.issn | 0304-3991 | |
dc.identifier.uri | https://hdl.handle.net/11250/3011024 | |
dc.description.abstract | Nitrogen (N) is a common element added to GaAs for band gap engineering and strain compensation. However, detection of small amounts of N is difficult for electron microscopy as well as for other chemical analysis techniques. In this work, N in GaAs is examined by using different transmission electron microscopy (TEM) techniques. While both dark-field TEM imaging using the composition sensitive (002) reflections and selected area diffraction reveal a significant difference between the doped thin-film and the GaAs substrate, spectroscopy techniques such as electron energy loss and energy dispersive X-ray spectroscopy are not able to detect N. To quantify the N content, quantitative convergent beam electron diffraction (QCBED) is used, which gives a direct evidence of N substitution and As vacancies. The measurements are enabled by the electron energy-filtered scanning CBED technique. These results demonstrate a sensitive method for composition analysis based on quantitative electron diffraction. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | Elsevier | en_US |
dc.rights | Navngivelse 4.0 Internasjonal | * |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/deed.no | * |
dc.subject | Scanning transmission electron microscopy (STEM) | en_US |
dc.subject | Gallium arsenide (GaAs) | en_US |
dc.subject | Convergent beam electron diffraction (CBED) | en_US |
dc.title | Detecting minute amounts of nitrogen in GaNAs thin films using STEM and CBED | en_US |
dc.type | Peer reviewed | en_US |
dc.type | Journal article | en_US |
dc.description.version | publishedVersion | en_US |
dc.rights.holder | © 2021 The Author(s). Published by Elsevier B.V. | en_US |
dc.source.pagenumber | 9 | en_US |
dc.source.volume | 231 | en_US |
dc.source.journal | Ultramicroscopy | en_US |
dc.identifier.doi | 10.1016/j.ultramic.2021.113299 | |
dc.identifier.cristin | 1922931 | |
dc.relation.project | Norges forskningsråd: 228956 | en_US |
dc.relation.project | Norges forskningsråd: 197405 | en_US |
dc.source.articlenumber | 113299 | en_US |
cristin.ispublished | true | |
cristin.fulltext | preprint | |
cristin.qualitycode | 1 | |