dc.contributor.author | Høiaas, Ida Marie | |
dc.contributor.author | Liudi Mulyo, Andreas | |
dc.contributor.author | Vullum, Per Erik | |
dc.contributor.author | Kim, Dong Chul | |
dc.contributor.author | Ahtapodov, Lyubomir | |
dc.contributor.author | Fimland, Bjørn-Ove | |
dc.contributor.author | Kishino, Katsumi | |
dc.contributor.author | Weman, Helge | |
dc.date.accessioned | 2020-12-30T11:37:11Z | |
dc.date.available | 2020-12-30T11:37:11Z | |
dc.date.created | 2019-02-25T10:58:53Z | |
dc.date.issued | 2019 | |
dc.identifier.citation | Nano letters (Print). 2019, 19 (3), 1649-1658. | en_US |
dc.identifier.issn | 1530-6984 | |
dc.identifier.uri | https://hdl.handle.net/11250/2721121 | |
dc.description.abstract | The many outstanding properties of graphene have impressed and intrigued scientists for the last few decades. Its transparency to light of all wavelengths combined with a low sheet resistance makes it a promising electrode material for novel optoelectronics. So far, no one has utilized graphene as both the substrate and transparent electrode of a functional optoelectronic device. Here, we demonstrate the use of double-layer graphene as a growth substrate and transparent conductive electrode for an ultraviolet light-emitting diode in a flip-chip configuration, where GaN/AlGaN nanocolumns are grown as the light-emitting structure using plasma-assisted molecular beam epitaxy. Although the sheet resistance is increased after nanocolumn growth compared with pristine double-layer graphene, our experiments show that the double-layer graphene functions adequately as an electrode. The GaN/AlGaN nanocolumns are found to exhibit a high crystal quality with no observable defects or stacking faults. Room-temperature electroluminescence measurements show a GaN related near bandgap emission peak at 365 nm and no defect-related yellow emission. | en_US |
dc.language.iso | eng | en_US |
dc.publisher | ACS Publications | en_US |
dc.relation.uri | https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.8b04607 | |
dc.subject | electrical injection | en_US |
dc.subject | nitride-based devices | en_US |
dc.subject | LED | en_US |
dc.subject | UV optoelectronics | en_US |
dc.subject | semiconductor nanocolumn | en_US |
dc.subject | graphene | en_US |
dc.title | GaN/AlGaN nanocolumn ultraviolet light-emitting diode using double-Layer graphene as substrate and transparent electrode | en_US |
dc.type | Peer reviewed | en_US |
dc.type | Journal article | en_US |
dc.description.version | acceptedVersion | en_US |
dc.rights.holder | © American Chemical Society 2018. This is the authors accepted and refereed manuscript to the article. | en_US |
dc.source.pagenumber | 1649-1658 | en_US |
dc.source.volume | 19 | en_US |
dc.source.journal | Nano letters (Print) | en_US |
dc.source.issue | 3 | en_US |
dc.identifier.doi | 10.1021/acs.nanolett.8b04607 | |
dc.identifier.cristin | 1680348 | |
dc.relation.project | Norges forskningsråd: 197405 | en_US |
dc.relation.project | Norges forskningsråd: 221860 | en_US |
dc.relation.project | Norges forskningsråd: 245963 | en_US |
dc.relation.project | Norges forskningsråd: 259553 | en_US |
cristin.unitcode | 7401,80,64,0 | |
cristin.unitname | Materialer og nanoteknologi | |
cristin.ispublished | true | |
cristin.fulltext | preprint | |
cristin.qualitycode | 2 | |