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dc.contributor.authorThøgersen, Annett
dc.contributor.authorJensen, Ingvild Julie Thue
dc.contributor.authorStange, Marit Synnøve Sæverud
dc.contributor.authorRøyset, Arne Karstein
dc.contributor.authorLøvvik, Ole Martin
dc.contributor.authorUlyashin, Alexander
dc.contributor.authorDiplas, Spyridon
dc.date.accessioned2020-12-28T12:07:33Z
dc.date.available2020-12-28T12:07:33Z
dc.date.created2019-01-11T19:14:25Z
dc.date.issued2018
dc.identifier.citationJournal of Physics: Condensed Matter. 2018, 30:35502 (33), 1-11.en_US
dc.identifier.issn0953-8984
dc.identifier.urihttps://hdl.handle.net/11250/2721013
dc.description.abstractHomogenous aSi1−xAlxHy alloyed thin films, made by magnetron sputtering, has been found to exhibit tunable band gap and dielectric constant depending on their composition. The optical properties of alloys are largely defined by their electronic structure, which is is strongly influenced by interatomic charge transfer. In this work we have quantified interatomic charge transfer between Si, Al and H in aSi1−xAlxHy thin-films, with and . Charge transfer was found experimentally using x-ray photoelectron spectroscopy, by incorporating Auger parameter data into the Thomas and Weightman model. Both the perfect and imperfect screening models were tested, and the results were compared to models calculated using density functional theory based molecular dynamics. Using imperfect screening properties of Si and Al resulted in an excellent agreement between the experimental and computational results. Alloying aSi with Al is associated with donation of electrons from Al to Si for y  =  0. For y  >  0 electrons are transferred away from both Al and Si. The change in Si valence charge increases linearly with increasing band gap and decreasing dielectric constant. These relationships can be used as a quick guide for the evaluation of the Si valence charge and subsequently optoelectronic properties, at specific Al/Si ratios.en_US
dc.language.isoengen_US
dc.publisherIOP Publishingen_US
dc.rightsNavngivelse 4.0 Internasjonal*
dc.rightsNavngivelse 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/deed.no*
dc.subjectXPSen_US
dc.subjectAugeren_US
dc.subjectchargeen_US
dc.subjectaluminiumen_US
dc.subjectsiliconen_US
dc.titleValence charge distribution in homogenous silicon-aluminium thin-filmsen_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.description.versionpublishedVersionen_US
dc.rights.holderCopyright: The authors. Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.en_US
dc.source.pagenumber1-11en_US
dc.source.volume30en_US
dc.source.journalJournal of Physics: Condensed Matteren_US
dc.source.issue33en_US
dc.identifier.doi10.1088/1361-648X/aad216
dc.identifier.cristin1655368
dc.source.articlenumber35502en_US
cristin.unitcode7401,80,62,0
cristin.unitcode7401,80,64,0
cristin.unitcode7401,80,63,0
cristin.unitnameBærekraftig energiteknologi
cristin.unitnameMaterialer og nanoteknologi
cristin.unitnameMetallproduksjon og prosessering
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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