• Cubic silicon carbide as a potential photovoltaic material 

      Syväjärvi, Mikael; Ma, Quanbao; Jokubavicius, Valdas; Galeckas, Augustinas; Sun, Jianwu; Liu, Xinyu; Jansson, Mattias; Wellmann, Peter; Linnarsson, Margareta; Runde, Paal; Johansen, Bertil; Thøgersen, Annett; Diplas, Spyridon; Carvalho, Patricia; Løvvik, Ole Martin; Wright, Daniel Nilsen; Azarov, Alexander; Svensson, Bengt Gunnar (Peer reviewed; Journal article, 2016)
      In this work we present a significant advancement in cubic silicon carbide (3C-SiC) growth in terms of crystal quality and domain size, and indicate its potential use in photovoltaics. To date, the use of 3C-SiC for ...
    • Enhancement of thermoelectric properties by energy filtering: Theoretical potential and experimental reality in nanostructured ZnSb 

      Berland, Kristian; Song, Xin; Carvalho, Patricia; Persson, Clas; Finstad, Terje; Løvvik, Ole Martin (Journal article; Peer reviewed, 2016)
      Energy filtering has been suggested by many authors as a means to improve thermoelectric properties. The idea is to filter away low-energy charge carriers in order to increase Seebeck coefficient without compromising ...
    • Enhancement of thermoelectric properties by energy filtering: Theoretical potential and experimental reality in nanostructured ZnSb 

      Berland, Kristian; Song, Xin; Carvalho, Patricia; Persson, Clas; Finstad, Terje; Løvvik, Ole Martin (Journal article; Peer reviewed, 2016)
      Energy filtering has been suggested by many authors as a means to improve thermoelectric properties. The idea is to filter away low-energy charge carriers in order to increase Seebeck coefficient without compromising ...
    • Interfacial characterization of Al-Al thermocompression bonds 

      Malik, Nishant; Carvalho, Patricia; Poppe, Erik; Finstad, Terje (Journal article; Peer reviewed, 2016)
      Interfaces formed by Al-Al thermocompression bonding were studied by the transmission electron microscopy. Si wafer pairs having patterned bonding frames were bonded using Al films deposited on Si or SiO2 as intermediate ...