Blar i SINTEF Industri på forfatter "Varandani, Deepak"

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    • Charge Transport in 2D MoS2, WS2, and MoS2–WS2 Heterojunction-Based Field-Effect Transistors: Role of Ambipolarity 

      Kaushik, Vishakha; Ahmad, Mujeeb; Khushboo, Agarwal; Varandani, Deepak; Belle, Branson; Das, Pintu; Mehta, Bodh R. (Peer reviewed; Journal article, 2020)
      Electrical and optical characteristics of few-layered (3–4 L) chemical vapor deposition (CVD) grown MoS2, WS2, and MoS2–WS2 heterostructure-based back-gated field-effect transistor (FET) devices have herein been studied. ...

    • Single digit parts-per-billion NOx detection using MoS2/hBN transistors 

      Ali, Ayaz; Koybasi, Ozhan; Xing, Wen; Wright, Daniel Nilsen; Varandani, Deepak; Taniguchi, Takashi; Watanabe, Kenji; Mehta, Bodh R.; Belle, Branson (Peer reviewed; Journal article, 2020)
      2D materials offer excellent possibilities for high performance gas detection due to their high surface-to-volume ratio, high surface activities, tunable electronic properties and dramatic change in resistivity upon molecular ...