• Environmental Stress Testing of Wafer-Level Au-Au Thermocompression Bonds Realized at Low Temperature: Strength and Hermeticity 

      Malik, Nishant; Tofteberg, Hannah Rosquist; Poppe, Erik; Finstad, Terje; Schjølberg-Henriksen, Kari (Journal article; Peer reviewed, 2015)
      Hermeticity, reliability and strength of four laminates bonded at different temperatures by Au-Au thermocompression bonding have been investigated. Laminates with a diameter of 150 mm were realized by bonding a wafer ...
    • Technologies enabling 3D stacking of MEMS 

      Taklo, Maaike Margrete Visser; Mielnik, Michal Marek; Schjølberg-Henriksen, Kari; Storås, Preben; Tofteberg, Hannah Rosquist; Lietaer, Nicolas; Johannessen, Rolf (Chapter, 2010)
    • TSV development for miniaturized MEMS acceleration switch 

      Lietaer, Nicolas; Summanwar, Anand; Dalsjø, Per G.; Bakke, Thor; Tofteberg, Hannah Rosquist (Lecture, 2010)
      Fragile micromachined MEMS structures are usually protected by bonding a capping wafer to the device wafer itself. As opposed to using lateral interconnects at the interface between the cap wafer and the device wafer, the ...
    • Wafer-level Au–Au bonding in the 350–450 ◦C temperature range 

      Tofteberg, Hannah Rosquist; Schjølberg-Henriksen, Kari; Fasting, Eivind Johan; Moen, Alexander Stene; Taklo, Maaike Margrete Visser; Poppe, Erik; Simensen, Christian Julius (Journal article; Peer reviewed, 2014)
      Metal thermocompression bonding is a hermetic wafer-level packaging technology that facilitates vertical integration and shrinks the area used for device sealing. In this paper, Au–Au bonding at 350, 400 and 450 °C has ...