Blar i SINTEF Open på forfatter "Schjølberg-Henriksen, Kari"

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    • 3D Integration of MEMS and IC: Design, technology and simulations 

      Schjølberg-Henriksen, Kari (Lecture, 2009)
      * 3D integration: Opportunities and trends* e-CUBES: Tire pressure monitoring system (TPMS)* Package design including thermo-mechanical modeling* Technology development* Sensor packaging concept* Gold stud bump bonding* ...

    • 3D interconnect technologies for advanced MEMS/NEMS applications 

      Lietaer, Nicolas; Taklo, Maaike Margrete Visser; Schjølberg-Henriksen, Kari; Ramm, Peter (Lecture, 2009)

    • Al-Al thermocompression bonding for wafer-level MEMS sealing 

      Malik, Nishant; Schjølberg-Henriksen, Kari; Poppe, Erik; Taklo, Maaike Margrete Visser; Finstad, Terje (Journal article; Peer reviewed, 2014)
      Al–Al thermocompression bonding has been studied using test structures relevant for wafer level sealing of MEMS devices. Si wafers with protruding frame structures were bonded to planar Si wafers, both covered with a ...

    • Al-Al Wafer-Level Thermocompression Bonding applied for MEMS 

      Taklo, Maaike M. Visser; Schjølberg-Henriksen, Kari; Malik, Nishant; Poppe, Erik Utne; Moe, Sigurd T.; Finstad, Terje (Chapter, 2017)
      Wafer-level thermocompression bonding (TCB) using aluminum (Al) is presented as a hermetic sealing method for MEMS. The process is a CMOS compatible alternative to TCB using metals like gold (Au) and copper (Cu), which are ...

    • Characterization of interfacial morphology of low temperature, low pressure Au–Au thermocompression bonding 

      Goorsky, Mark S.; Schjølberg-Henriksen, Kari; Beekley, Brett; Bai, Tingyu; Mani, Karthick; Ambhore, Pranav; Bajwa, Adeel; Malik, Nishant; Iyer, Subramanian S. (Journal article; Peer reviewed, 2017)
      Au-Au thermocompression bonding is a versatile technique of high interest for a variety of applications. We have investigated Au-Au bonding using sputter deposited Au films under conditions of low temperature (150-250 °C) ...

    • Conductivity of high-temperature annealed silicon direct wafer bonds 

      Schjølberg-Henriksen, Kari; Tvedt, Lars Geir Whist; Gjelstad, Stein Are; Mørk, Christopher; Moe, Sigurd T.; Imenes, Kristin; Poppe, Erik; Wang, Dag Thorstein (Journal article; Peer reviewed, 2015)
      Silicon direct wafer bonding is a process with many application areas. Depending on the application, perfect insulation or negligible resistance is desired across the bonded interface. We have investigated the resistivity ...

    • Electrical, Mechanical, and Hermetic Properties of Low-Temperature, Plasma Activated Direct Silicon Bonded Joints 

      Schjølberg-Henriksen, Kari; Malik, Nishant; Gundersen, Elin Vold; Christiansen, Oscar Rincon; Imenes, Kristin; Fournel, Frank; Moe, Sigurd T. (Journal article; Peer reviewed, 2015)
      The electrical, mechanical, and hermeticity properties of low-temperature, plasma activated direct silicon bonds were investigated. On individual dies with a bonding area ranging from 1–4 mm2, the bonded interface was found ...

    • Environmental Stress Testing of Wafer-Level Al-Al Thermocompression Bonds: Strength and Hermeticity 

      Malik, Nishant; Poppe, Erik; Schjølberg-Henriksen, Kari; Taklo, Maaike Margrete Visser; Finstad, Terje (Journal article; Peer reviewed, 2015)
      Hermeticity, reliability and strength of Al-Al thermocompression bonds realized by applying different bonding parameters have been investigated. Laminates of diameter 150 mm were realized by bonding wafers containing ...

    • Environmental Stress Testing of Wafer-Level Au-Au Thermocompression Bonds Realized at Low Temperature: Strength and Hermeticity 

      Malik, Nishant; Tofteberg, Hannah Rosquist; Poppe, Erik; Finstad, Terje; Schjølberg-Henriksen, Kari (Journal article; Peer reviewed, 2015)
      Hermeticity, reliability and strength of four laminates bonded at different temperatures by Au-Au thermocompression bonding have been investigated. Laminates with a diameter of 150 mm were realized by bonding a wafer ...

    • Impact of SiO2 on Al–Al thermocompression wafer bonding 

      Malik, Nishant; Schjølberg-Henriksen, Kari; Poppe, Erik; Taklo, Maaike Margrete Visser; Finstad, Terje (Journal article; Peer reviewed, 2015)
      Al–Al thermocompression bonding suitable for wafer level sealing of MEMS devices has been investigated. This paper presents a comparison of thermocompression bonding of Al films deposited on Si with and without a thermal ...

    • (Invited) 3D Interconnect Technologies for Advanced MEMS/NEMS Applications 

      Lietaer, Nicolas; Taklo, Maaike M. Visser; Schjølberg-Henriksen, Kari; Ramm, Peter (Journal article; Peer reviewed, 2010)
      3D integration and wafer level packaging (WLP) with through-silicon vias offer benefits like reduced footprint and improved performance. CMOS imaging sensors is one of the first successful introductions of a product with ...

    • Low-Temperature Aluminum-Aluminum Wafer Bonding 

      Rebhan, Bernhard; Hinterreiter, Andreas; Malik, Nishant; Schjølberg-Henriksen, Kari; Dragoi, Viorel; Hingerl, Kurt (Journal article; Peer reviewed, 2016)
      Aluminum-aluminum thermo-compression wafer bonding is becoming increasingly important in the production of microelectromechanical systems (MEMS) devices. As the chemically highly stable aluminum oxide layer acts as a ...

    • Metal Films for MEMS Pressure Sensors: Comparison of Al, Ti, Al-Ti Alloy and Al/Ti Film Stacks 

      Vereshchagina, Elizaveta; Poppe, Erik Utne; Schjølberg-Henriksen, Kari; Wöhrmann, Markus; Moe, Sigurd T. (Chapter, 2018)
      Thermo-mechanical stability of metal structures is one of the key factors affecting accuracy of micro-electromechanical (MEMS) piezoresistive pressure sensors. In this work, we present the measurement results of stress and ...

    • Non-destructive wafer-level bond defect identification by scanning acoustic microscopy 

      Brand, Sebastian; Tismer, Sebastian; Moe, Sigurd T.; Schjølberg-Henriksen, Kari (Journal article; Peer reviewed, 2015)
      Metal-based thermocompression bonding enables the creation of hermetic seals formed at relatively low processing temperatures and occupying a small portion of the device area. In the current study we have investigated the ...

    • Non-destructive wafer-level bond defect identification by scanning acoustic microscopy 

      Brand, Sebastian; Tismer, Sebastian; Moe, Sigurd T.; Schjølberg-Henriksen, Kari (Journal article; Peer reviewed, 2015)
      Metal-based thermocompression bonding enables the creation of hermetic seals formed at relatively low processing temperatures and occupying a small portion of the device area. In the current study we have investigated the ...

    • Technologies enabling 3D stacking of MEMS 

      Taklo, Maaike Margrete Visser; Mielnik, Michal Marek; Schjølberg-Henriksen, Kari; Storås, Preben; Tofteberg, Hannah Rosquist; Lietaer, Nicolas; Johannessen, Rolf (Chapter, 2010)

    • Texture of Al films for wafer-level thermocompression bonding 

      Malik, Nishant; Venkatachalapathy, Vishnukanthan; Dall, Wilhelm; Schjølberg-Henriksen, Kari; Poppe, Erik Utne; Taklo, Maaike M. Visser; Finstad, Terje (Journal article; Peer reviewed, 2017)
      Properties of aluminum thin films for thermocompression bonding have been studied in terms of surface roughness, grain size, and grain orientation by AFM, SEM, XRD and EBSD for thermocompression bonding. Al films were ...

    • The Synergistic Roles of Temperature and Pressure in Thermo-Compression Bonding of Au 

      Ambhore, Pranav; Mani, Karthick; Beekley, Brett; Malik, Nishant; Schjølberg-Henriksen, Kari; Iyer, Subramanian S.; Goorsky, Mark S. (Peer reviewed; Journal article, 2018)
      Abstract Au-Au thermocompression bonding is a widely used technique for a variety of applications including hermetic sealing and packaging at a fine pitch. We have investigated the roles of pressure and temperature ...

    • Wafer-level Au–Au bonding in the 350–450 ◦C temperature range 

      Tofteberg, Hannah Rosquist; Schjølberg-Henriksen, Kari; Fasting, Eivind Johan; Moen, Alexander Stene; Taklo, Maaike Margrete Visser; Poppe, Erik; Simensen, Christian Julius (Journal article; Peer reviewed, 2014)
      Metal thermocompression bonding is a hermetic wafer-level packaging technology that facilitates vertical integration and shrinks the area used for device sealing. In this paper, Au–Au bonding at 350, 400 and 450 °C has ...