• Detecting minute amounts of nitrogen in GaNAs thin films using STEM and CBED 

      Vatanparast, Maryam; Shao, Yu-Tsun; Rajpalke, Mohana; Fimland, Bjørn-Ove; Reenaas, Turid Dory; Holmestad, Randi; Vullum, Per Erik; Zuo, Jian Min (Peer reviewed; Journal article, 2021)
      Nitrogen (N) is a common element added to GaAs for band gap engineering and strain compensation. However, detection of small amounts of N is difficult for electron microscopy as well as for other chemical analysis techniques. ...
    • The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene 

      Liudi Mulyo, Andreas; Rajpalke, Mohana; Vullum, Per Erik; Weman, Helge; Kishino, Katsumi; Fimland, Bjørn-Ove (Peer reviewed; Journal article, 2020)
      GaN nanocolumns were synthesized on single-layer graphene via radio-frequency plasma-assisted molecular beam epitaxy, using a thin migration-enhanced epitaxy (MEE) AlN buffer layer as nucleation sites. Due to the weak ...