Blar i SINTEF Open på forfatter "Poppe, Erik"

Viser treff 1-9 av 9

    • Al-Al thermocompression bonding for wafer-level MEMS sealing 

      Malik, Nishant; Schjølberg-Henriksen, Kari; Poppe, Erik; Taklo, Maaike Margrete Visser; Finstad, Terje (Journal article; Peer reviewed, 2014)
      Al–Al thermocompression bonding has been studied using test structures relevant for wafer level sealing of MEMS devices. Si wafers with protruding frame structures were bonded to planar Si wafers, both covered with a ...

    • Conductivity of high-temperature annealed silicon direct wafer bonds 

      Schjølberg-Henriksen, Kari; Tvedt, Lars Geir Whist; Gjelstad, Stein Are; Mørk, Christopher; Moe, Sigurd T.; Imenes, Kristin; Poppe, Erik; Wang, Dag Thorstein (Journal article; Peer reviewed, 2015)
      Silicon direct wafer bonding is a process with many application areas. Depending on the application, perfect insulation or negligible resistance is desired across the bonded interface. We have investigated the resistivity ...

    • Environmental Stress Testing of Wafer-Level Al-Al Thermocompression Bonds: Strength and Hermeticity 

      Malik, Nishant; Poppe, Erik; Schjølberg-Henriksen, Kari; Taklo, Maaike Margrete Visser; Finstad, Terje (Journal article; Peer reviewed, 2015)
      Hermeticity, reliability and strength of Al-Al thermocompression bonds realized by applying different bonding parameters have been investigated. Laminates of diameter 150 mm were realized by bonding wafers containing ...

    • Environmental Stress Testing of Wafer-Level Au-Au Thermocompression Bonds Realized at Low Temperature: Strength and Hermeticity 

      Malik, Nishant; Tofteberg, Hannah Rosquist; Poppe, Erik; Finstad, Terje; Schjølberg-Henriksen, Kari (Journal article; Peer reviewed, 2015)
      Hermeticity, reliability and strength of four laminates bonded at different temperatures by Au-Au thermocompression bonding have been investigated. Laminates with a diameter of 150 mm were realized by bonding a wafer ...

    • Impact of SiO2 on Al–Al thermocompression wafer bonding 

      Malik, Nishant; Schjølberg-Henriksen, Kari; Poppe, Erik; Taklo, Maaike Margrete Visser; Finstad, Terje (Journal article; Peer reviewed, 2015)
      Al–Al thermocompression bonding suitable for wafer level sealing of MEMS devices has been investigated. This paper presents a comparison of thermocompression bonding of Al films deposited on Si with and without a thermal ...

    • Interfacial characterization of Al-Al thermocompression bonds 

      Malik, Nishant; Carvalho, Patricia; Poppe, Erik; Finstad, Terje (Journal article; Peer reviewed, 2016)
      Interfaces formed by Al-Al thermocompression bonding were studied by the transmission electron microscopy. Si wafer pairs having patterned bonding frames were bonded using Al films deposited on Si or SiO2 as intermediate ...

    • Metallization scheme and release methods for fabrication of RF MEMS switches 

      Saha, Shimul Chandra; Sæther, Trond; Jensen, Geir uri; Poppe, Erik; Sagberg, Håkon (Chapter, 2007)

    • Qualification and applications of a piezoelectric MEMS process 

      Poppe, Erik; Østbø, Niels Peter; Tyholdt, Frode (Chapter, 2007)
      An industrializable process for manufacturing of piezoelectric ultrasound transducer elements is demonstrated. The PZT film is deposited by chemical solution deposition on SOI wafers, and standard MEMS processes are utilized ...

    • Wafer-level Au–Au bonding in the 350–450 ◦C temperature range 

      Tofteberg, Hannah Rosquist; Schjølberg-Henriksen, Kari; Fasting, Eivind Johan; Moen, Alexander Stene; Taklo, Maaike Margrete Visser; Poppe, Erik; Simensen, Christian Julius (Journal article; Peer reviewed, 2014)
      Metal thermocompression bonding is a hermetic wafer-level packaging technology that facilitates vertical integration and shrinks the area used for device sealing. In this paper, Au–Au bonding at 350, 400 and 450 °C has ...