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dc.contributor.authorLietaer, Nicolas
dc.contributor.authorTaklo, Maaike M. Visser
dc.contributor.authorSchjølberg-Henriksen, Kari
dc.contributor.authorRamm, Peter
dc.date.accessioned2017-02-20T14:38:12Z
dc.date.available2017-02-20T14:38:12Z
dc.date.created2017-02-16T10:05:24Z
dc.date.issued2010
dc.identifier.citationECS Transactions. 2010, 25 (38), 87-95.nb_NO
dc.identifier.issn1938-5862
dc.identifier.urihttp://hdl.handle.net/11250/2431479
dc.description.abstract3D integration and wafer level packaging (WLP) with through-silicon vias offer benefits like reduced footprint and improved performance. CMOS imaging sensors is one of the first successful introductions of a product with TSVs on the market, and 3D integrated memory stacks are expected to follow soon. Also sensor and actuator systems based on micro- and nano-electromechanical systems (MEMS/NEMS) will greatly benefit from WLP and 3D integration of the transducers and their readout and controller ICs. Ultimately, heterogeneous integration of different device technologies will allow the fabrication of MEMS/IC and NEMS/IC products with new and improved functionalities. For this to become a reality, cost-effective and reliable 3D integration technologies need to be developed. This paper gives an overview and reports on the current status of 3D interconnect technologies that will enable 3D integration for advanced MEMS/NEMS applications.
dc.language.isoengnb_NO
dc.title(Invited) 3D Interconnect Technologies for Advanced MEMS/NEMS Applicationsnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.source.pagenumber87-95nb_NO
dc.source.volume25nb_NO
dc.source.journalECS Transactionsnb_NO
dc.source.issue38nb_NO
dc.identifier.doi10.1149/1.3390661
dc.identifier.cristin1451127
cristin.unitcode7401,90,31,0
cristin.unitcode7401,90,32,0
cristin.unitnameMikrosystemer og nanoteknologi
cristin.unitnameInstrumentering
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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